cystech electronics corp. spec. no. : c911x6 issued date : 2013.07.12 revised date : 2013.07.23 page no. : 1/10 MTDN8233X6 cystek product specification dual n -channel enhancement mode mosfet MTDN8233X6 bv dss 20v i d v gs =4.5v 11a 6.0m v gs =4.5v, i d =5.5a v gs =4.0v, i d =5.5a 6.0m v gs =3.7v, i d =5.5a 6.2 m v gs =3.1v, i d =5.5a description the MTDN8233X6 consists of two n-channel e nhancement-mode mosfets in a single tdfn2 3-6l package, providing the designer with the best combin ation of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the tdfn2 3-6l package is universally preferred fo r all commercial-industrial surface mount applications. features ? simple drive requirement ? low gate charge ? low on-resistance ? fast switching speed ? esd protected ? pb-free lead plating and halogen-free package equivalent circuit outline MTDN8233X6 tdfn2 3-6l g gate s source d drain 6.7 m r dson ( typ .) v gs =2.5v, i d =5.5a 7.8 m
cystech electronics corp. spec. no. : c911x6 issued date : 2013.07.12 revised date : 2013.07.23 page no. : 2/10 MTDN8233X6 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source breakdown voltage bv dss 20 gate-source voltage v gs 12 v t a =70 c i d 11 continuous drain current (note 1) t a =25 c i d 8.8 pulsed drain current (note 2) i dm 70 a t a =70 c 1.56 total power dissipation (note 1) t a =25 c p d 1.00 w operating junction and storage temperature tj, tstg -55~+150 c note : 1.surface mounted on 1 in2 copper pad of fr-4 board, t 10 sec 2. pulse width limited by maximum junction temperature thermal data parameter symbol value unit thermal resistance, junction-to-ambient, max r ja 80 (note ) c/w note :.surface mounted on 1 in2 copper pad of fr-4 board, t 10 sec; 161 c/w when mounted on minimum copper pad electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 20 - - v v gs =0, i d =250 a ? bv dss / ? tj - 0.02 - v/ c reference to 25c, i d =1ma v gs(th) 0.5 0.72 1.5 v v ds =v gs , i d =1ma i gss - - 10 v gs =12v, v ds =0 - - 1 v ds =18v, v gs =0 i dss - - 10 a v ds =16v, v gs =0, tj=70c 5.0 6.0 8.2 i d =5.5a, v gs =4.5v 5.2 6.0 8.5 i d =5.5a, v gs =4v 5.4 6.2 9 i d =5.5a, v gs =3.7v 5.8 6.7 9.4 i d =5.5a, v gs =3.1v *r ds(on) 6.0 7.8 11 m i d =5.5a, v gs =2.5v *g fs - 20 - s v ds =5v, i d =5.5a dynamic ciss - 1350 - coss - 185 - crss - 160 - pf v ds =10v, v gs =0, f=1mhz *t d(on) - 28 - *t r - 64 - *t d(off) - 60 - *t f - 55 - ns v ds =16v, i d =5.5a, v gs =4.5v, r g =6
cystech electronics corp. spec. no. : c911x6 issued date : 2013.07.12 revised date : 2013.07.23 page no. : 3/10 MTDN8233X6 cystek product specification *qg - 15 - *qgs - 2.8 - *qgd - 4.4 - nc v ds =16v, i d =11a, v gs =4.5v source-drain diode *v sd - 0.82 1.2 v v gs =0v, i s =11a *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTDN8233X6-0-t1-g tdfn2 3-6l (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c911x6 issued date : 2013.07.12 revised date : 2013.07.23 page no. : 4/10 MTDN8233X6 cystek product specification typical characteristics typical output characteristics 0 10 20 30 40 50 60 70 0 0.2 0.4 0.6 0.8 1 v ds , drain-source voltage(v) i d , drain current(a) v gs =2.5v v gs =2v 5v 4.5v 4v 3.5v 3v v gs =1.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =1.5v v gs =2v v gs =2.5v v gs =3.1v v gs =3.7v v gs =4v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4.5v, i d =5.5a r ds( on) @ tj=25c : 6m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =5.5a
cystech electronics corp. spec. no. : c911x6 issued date : 2013.07.12 revised date : 2013.07.23 page no. : 5/10 MTDN8233X6 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) pulsed ta=25c v ds =5v gate charge characteristics 0 1 2 3 4 5 04812 total gate charge---qg(nc) v gs , gate-source voltage(v) 16 i d =11a v ds =16v v ds =10v v ds =4v maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 1s r ds( on ) limit t a =25c, tj(max)=150c, v gs =4.5v, r ja =80c/w single pulse maximum drain current vs junction temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =80c/w
cystech electronics corp. spec. no. : c911x6 issued date : 2013.07.12 revised date : 2013.07.23 page no. : 6/10 MTDN8233X6 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 10 20 30 40 50 60 70 012345 v gs , gate-source voltage(v) i d , drain current (a) v ds =5v single pulse maximum power dissipation 0 50 100 150 200 250 300 0.001 0.01 0.1 1 10 100 1000 pulse width(s) peak transient power (w) t j(max) =150c t a =25c ja =80c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =80 c/w
cystech electronics corp. spec. no. : c911x6 issued date : 2013.07.12 revised date : 2013.07.23 page no. : 7/10 MTDN8233X6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c911x6 issued date : 2013.07.12 revised date : 2013.07.23 page no. : 8/10 MTDN8233X6 cystek product specification tdfn2 3-6l dimension date code device name style: pin 1. source 1(s1) pin 2. source 1(s1) pin 3. gate 1 (g1) pin 4. gate 2 (g2) pin 5. source 2(s2) pin 6. source 2(s2) 6-lead tdfn2 3-6l plastic surface mounted package cystek package code: x6 marking: millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.700 0.850 0.028 0.033 e1 1.650 1.750 0.065 0.069 a1 0.000 0.050 0.000 0.002 k 0.200 - 0.008 - a3 0.203 ref 0.008 ref b 0.200 0.300 0.008 0.012 d 1.950 2.050 0.077 0.081 e 0.500 typ 0.020 typ e 2.950 3.050 0.116 0.120 l 0.300 0.400 0.012 0.016 d1 1.450 1.550 0.057 0.061 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead :pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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